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SUMMIT2629™ 5G 28GHz Beamforming Front End IC

The SUMMIT 2629™, an eight-channel RF front-end for 28 GHz, 5G phased array antenna systems fabricated in RF-SOI. The SUMMIT 2629 was designed to address the challenges constraining 5G mmWave performance by:

  • Extending the link range to decrease infrastructure costs and improve customer satisfaction.
  • Reducing power consumption and thermal dissipation.
  • Reducing antenna array complexity and overall RF front-end cost.

Operating from 26.5 to 29.5 GHz, the SUMMIT 2629 RFIC integrates power amplifiers (PA), low noise amplifiers, T/R switching, beamformers with beam table memory, calibration, gain control and temperature and power telemetry with a high-speed system peripheral interface (SPI) for control. A single SUMMIT 2629 provides two sets of four channels for two antenna polarizations – a total of eight channels per RFIC.

MixComm Summit 2629 Chips

SUMMIT3741™ 5G 39GHz Beamforming Front End IC

The Summit 3741 integrates novel power amplifiers, low noise amplifiers, T/R switching, beamformers, calibration, gain control, beam table memory, temperature and power telemetry, and high-speed SPI control for a front-end module with optimal partitioning for 5G infrastructure. The device is suitable for Antenna-in-Package (AiP) implementations, as well as conventional chip-on-board integration through the use of interposers. SUMMIT 3741 also features enhanced and cutting-edge digital integration, uniquely enabled by the GLOBALFOUNDRIES® (GF®) 45RFSOI process, which has inherent advantages over other semiconductor technologies for mmWave applications.

MixComm SUMMIT 3741 product highlights:

  • Operation from 37 GHz to 41 GHz
  • Four-element dual-polarization TX/RX
  • Independent dual-polarization beam directions
  • Ultra-low TX- and RX-mode power consumption
  • High-power, high efficiency stacked SOI CMOS PAs
  • Low-loss T/R switch for TDD support
  • 6-bit full-360o phase shifting and 0.5dB-step 16dB- range variable gain in each path
  • Fully calibrated for gain/phase matching Across ICs
  • On-chip temperature sensor
  • Gain control for temperature compensation
  • On-chip power sensor for each TX
  • Operates from 1V, 1.8V and 4V power supplies
  • 100MHz SPI with 2048-entry on-chip beam table storage
  • 6-/8-bit chip ID with multiple modes of programming
  • Flip-chip die with 75μm bump size and 200μm bump pitch

Features

  • Four-element Dual-pol. TX/RX with Independent Polarization Beam Directions
  • High-Power, High-Efficiency SOI CMOS Power Amplifiers
  • State-of-the-art Low-Noise Amplifiers and Low-Loss T/R Switching
  • Ultra-low Transmit and Receive-Mode Power Consumption
  • 6-bit full-360o Phase Shifting and 0.5dB-step 16dB-range Variable Gain in Each Path
  • Fully calibrated for Gain/Phase Matching Across ICs
  • Extensive On-chip Temperature and Power Sensing
  • On-chip Gain Control for Temperature Compensation
  • High-Speed SPI with Large On-Chip Beam Table Storage
  • Wafer-Level Chip-Scale Package (WLCSP) compatible with low-cost PCB manufacturing
  • Support for Large-Scale Arrays through Multiple Chip-Addressing Modes
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